Abstract
Operating optic-to-electronic data conversion at the terahertz (THz) frequency range is one of the most promising issue of optoelectronic devices. Recently, experimental studies on the plasma resonant detection in high electron mobility transistors (HEMTs) have been published [1], For submicron gate-lengths, fundamental plasma frequencies reach the THz range [2], THz plasma waves resonances can also be excited by means of interband photoexcitation using the difference-frequency component of a photomixed cw laser beam [3, 4].
© 2007 IEEE
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