Abstract

Optically-pumped semiconductor disk lasers (SDLs) promise to be versatile femtosecond sources, because they can be tailored for almost any wavelength. Very recently, by passive mode-locking of SDLs with a semiconductor saturable absorber mirror (SESAM), pulse durations as short as 290 fs [1] and 260 fs [2] were demonstrated in the 1-µm wavelength range. Here, we investigate the laser parameters important for short-pulse performance and present 190-fs pulses from a diode-pumped InGaAs/AlGaAs laser emitting around 1045 nm. By this, we improved the record for semiconductor lasers without external pulse compression. Furthermore, we showed the feasibility of a new tapered diode amplifier with ultrafast electrical pumping for pulse amplification and picking, giving free choice of pulse repetition frequency.

© 2009 IEEE