Abstract
Recent progress in fabrication of the high-power laser diodes with quantum-sized active layers has attracted attention to the processes taking place in the active media under extremely high pumping conditions [1]. Study of such processes associated with both high carrier and photon densities is believed to cast light upon the fundamental factors limiting the optical power of the laser diodes. In this report, we present experimental study of spectrally-resolved dynamics of InGaAs/GaAs/AlGaAs QW laser diodes emitting through multiple electron and hole quantum levels. 4mm-long lasers with 7 µm stripes were pumped with short 150 ns electrical pulses with low 16 kHz repetition rate in order to avoid overheating. This has allowed to apply pumping current amplitudes up to 10 A, to the level of hundreds of thresholds.
© 2009 IEEE
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