Abstract

In this contribution we present first results of the implementation of the concept of terahertz (THz) generation by difference frequency mixing in an active semiconductor structure using dual-color radiation [1] in the optical C-band (1.53 nm - 1.56 nm). The design comprises an enhancement of terahertz conversion efficiency compared to free-space mixing in nonlinear crystals by several means: i) enhancement of χ⁽²⁾ in doubly-resonant asymmetric quantum well structures [2], ii) enhancement of nonlinear interaction length and fields by mixing in a waveguide and employing polaritonic phase-matching [3]; iii) reducing THz losses (Drude loss) by using undoped materials and implementing a double-plasmon THz waveguide.

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