Abstract

Semiconductor nanowires have already shown their perspectives in construction of electronic and optoelectronic nanodevices [1], so the rational control over their morphology, structure, and properties became increasingly important. The application of the standard methods for semiconductor characterization is often restricted by the space charge formation near the blocking contacts. The non-steady-state photoelectromotive force (photo-EMF) technique based on the detection of the alternating electric current arising in the sample illuminated by an oscillating interference pattern is the most versatile and advanced method [2].

© 2009 IEEE