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  • CLEO/Europe and EQEC 2011 Conference Digest
  • OSA Technical Digest (CD) (Optica Publishing Group, 2011),
  • paper CB7_1

Density-Activated Defect Recombination as a Possible Explanation for the Efficiency Droop in GaN-Based Light Emitters

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The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss – at least for the low to medium density regime.

© 2011 Optical Society of America

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