Picosecond pulses with more than 60 W peak power generated by a single-stage all-semiconductor master-oscillator power-amplifier system

S. Schwertfeger; A. Klehr; A. Liero; T. Hoffmann; H. Wenzel; G. Erbert

CLEO/Europe and EQEC 2011 Conference Digest
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper CB7_4

Picosecond pulses with more than 60 W peak power generated by a single-stage all-semiconductor master-oscillator power-amplifier system

S. Schwertfeger, A. Klehr, A. Liero, T. Hoffmann, H. Wenzel, and G. Erbert

The European Conference on Lasers and Electro-Optics 2011

Munich Germany
22–26 May 2011
ISBN: 978-1-4577-0532-8

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GaN-based and High-Power Semiconductor Lasers (CB7)

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S. Schwertfeger, A. Klehr, A. Liero, T. Hoffmann, H. Wenzel, and G. Erbert, "Picosecond pulses with more than 60 W peak power generated by a single-stage all-semiconductor master-oscillator power-amplifier system," in CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper CB7_4.

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Abstract

Picosecond laser pulses have found widespread applications in numerous fields. While each application has specific requirements concerning power level and wavelength, many of them benefit from variable pulse repetition rates. For example, in material processing, pulse bursts allow for superior cut edges, while in fluorescence spectroscopy, adjustable repetition rates help to avoid photo bleaching.

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