Abstract

Compact diode-pumped Q-switched lasers with pulse repetition rate of tens kHz are of practical importance for diverse materials processing applications. Currently the most popular active media for such commercial systems are Nd-doped crystals (YAG, YVO₄ or YLF). High quantum defect of Nd ions leads to significant thermo-optic aberrations that restrict the possibilities of power scaling, especially at high repetition rates. In order to obtain relatively high output powers, sophisticated cooling systems and powerful 808 nm AlGaAs diodes are used, which results in the drop of the cost efficiency. The utilization of Yb-doped material could improve the performance and cost of Q-switched laser system because of the substantial reduction of the thermal effects due to low quantum defect and high availability of InGaAs diodes. Here we present the results of experimental study of Yb:KGW diode-pumped actively Q-switched laser. Schematic of the laser is shown in Fig. 1.

© 2013 IEEE