Abstract

For applications like very sensitive and stable gyrometers, gradiometers, and gravimeters, based on Rubidium atoms cooling and interferometry, the development of compact high power and very narrow linewidth optical sources at 780nm has become very important. Discrete or integrated MOPA (Master Oscillator Power Amplifier) are very promising candidates. In previous works we demonstrated an Al-free active region DFB laser diode emitting at 780nm for the D2 line of the Rubidium [1]. Here we present a new tapered Semiconductor Optical Amplifier (SOA) structure that exhibits more than 600mW output power at a wavelength of 780nm.

© 2013 IEEE