Abstract

Miniaturization has been the ever-present motif of semiconductor laser design. Recently attention has been given to sub-wavelength semiconductor nano-lasers. Of particular interest is the so-called nanowire laser which offers significant potential as a fundamental building block for nanoscale electronic and photonic devices [1]. A specific class of such devices which has attracted recent interest is GaN nanowire lasers which aim to exploit the favourable properties of the semiconductor for short-wavelength optoelectronic devices [2,3].

© 2013 IEEE