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  • 2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference
  • (Optica Publishing Group, 2013),
  • paper CC_P_4

Pulsed THz generation from InAs/GaAs quantum-dot structures

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Abstract

Photoconductive devices for THz time-domain spectroscopy systems should ideally be based on materials with short carrier lifetimes, high breakdown voltages, low dark currents, and high carrier mobilities. One of the most widely used materials for such devices is low-temperature-grown (LTG) GaAs, which in its as-grown state is relatively conductive, and as such, must be annealed in order to increase its resistivity. However, a well-known trade-off is that the annealing process also increases LTG-GaAs’s carrier lifetime. In this paper, we demonstrate for the first time the use of an annealed surfactant-mediated-grown InAs/GaAs quantum-dot (QD) photoconductive antenna for pulsed THz generation, for which the annealing process did not display such trade-off. Previously, we had demonstrated THz emission from InAs/GaAs QD based photoconductive antennae using an autocorrelation interferometer setup [1]. Here, we also present the first coherent THz generation and detection results using a QD-based antenna as the emitter.

© 2013 IEEE

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