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  • 2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference
  • (Optica Publishing Group, 2013),
  • paper CE_1_3

Ga(As)Sb/GaAs quantum dots for emission around 1300 nm

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Abstract

We report on Ga(As)Sb/GaAs quantum dots (QDs) for use in efficient QD lasers. The emission wavelength can be chosen with the variation of the growth temperature and the Sb/Ga V/III partial pressure flux ratio [1,2]. As can be seen from the experimental photoluminescence (PL) results in Fig. 1a, the emission wavelength can be shifted in a wide range between 876 and 1035 nm. The nominal coverage of 3 monolayers (ML) is constant. A higher Sb flux causes bigger quantum dots with a higher Sb concentration within the dots. This results in a red shift of the emission wavelength. In contrast, a higher growth temperature leads to a (here) even larger blue shift, caused by an increase of the As diffusion into the QDs. A higher growth temperature also increases dot size, but As and Sb intermixing is the dominating process causing the resulting (net) blue shift. With these growth parameters we could not achieve an emission wavelength beyond 1100 nm.

© 2013 IEEE

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