UV laser-induced poling inhibited domain building blocks for photonic and nonlinear optical microstructures

G. Zisis; C. Y. J. Ying; E. Soergel; S. Mailis

2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference
(Optica Publishing Group, 2013),
paper CE_8_1

UV laser-induced poling inhibited domain building blocks for photonic and nonlinear optical microstructures

G. Zisis, C. Y. J. Ying, E. Soergel, and S. Mailis

The European Conference on Lasers and Electro-Optics 2013

Munich Germany
12–16 May 2013
ISBN: 978-1-4799-0594-2

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Lithium Niobate - Fabrication and Characterization (CE_8)

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G. Zisis, C. Y. J. Ying, E. Soergel, and S. Mailis, "UV laser-induced poling inhibited domain building blocks for photonic and nonlinear optical microstructures," in 2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference, (Optica Publishing Group, 2013), paper CE_8_1.

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Abstract

UV laser induced poling inhibition (PI) is a method for domain engineering in ferroelectric lithium niobate crystals. This method is capable of producing localised ferroelectric domains whose shape and orientation is defined by a UV laser pre-irradiated pattern. Poling inhibition is observed at the locations of the +z face of the crystal that have been exposed to UV laser radiation (244 nm–305 nm) prior to uniform domain inversion by electric field poling at room temperature[1].

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