Silicon-Organic Hybrid (SOH) IQ Modulator for 16QAM at 112 Gbit/s

D. Korn; R. Palmer; H. Yu; P. C. Schindler; L. Alloatti; M. Baier; R. Schmogrow; W. Bogaerts; S. Selvaraja; G. Lepage; M. Pantouvaki; J. Wouters; P. Verheyen; J. Van Campenhout; P. Absil; R. Baets; R. Dinu; C. Koos; C. Koos; W. Freude; W. Freude; J. Leuthold; J. Leuthold

2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference
(Optica Publishing Group, 2013),
paper CK_9_2

Silicon-Organic Hybrid (SOH) IQ Modulator for 16QAM at 112 Gbit/s

D. Korn, R. Palmer, H. Yu, P. C. Schindler, L. Alloatti, M. Baier, R. Schmogrow, W. Bogaerts, S. Selvaraja, G. Lepage, M. Pantouvaki, J. Wouters, P. Verheyen, J. Van Campenhout, P. Absil, R. Baets, R. Dinu, C. Koos, W. Freude, and J. Leuthold

The European Conference on Lasers and Electro-Optics 2013

Munich Germany
12–16 May 2013
ISBN: 978-1-4799-0594-2

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Integrated Photonic Devices (CK_9)

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D. Korn, R. Palmer, H. Yu, P. C. Schindler, L. Alloatti, M. Baier, R. Schmogrow, W. Bogaerts, S. Selvaraja, G. Lepage, M. Pantouvaki, J. Wouters, P. Verheyen, J. Van Campenhout, P. Absil, R. Baets, R. Dinu, C. Koos, W. Freude, and J. Leuthold, "Silicon-Organic Hybrid (SOH) IQ Modulator for 16QAM at 112 Gbit/s," in 2013 Conference on Lasers and Electro-Optics - International Quantum Electronics Conference, (Optica Publishing Group, 2013), paper CK_9_2.

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Abstract

Silicon modulators fabricated by scalable, established CMOS technology, promise an answer to today’s power consumption challenges. With advanced modulation formats and the resulting higher spectral efficiencies, long-haul applications for silicon modulators come into reach. Energy efficient, high speed modulators were demonstrated as resonant [1] and non-resonant [2] devices. A single-carrier single-polarization data rate of 56 Gbit/s is considered state-of-the-art [3]. Usually, free-carrier dispersion is exploited in silicon modulators.

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