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Recently, the interest in silicon based nanophotonic devices with electro optic functionality has strongly increased. In Silicon a second order electro optic activity can be induced by breaking the inversion symmetry of the crystal lattice. Commonly this is done by straining the silicon lattice for example by applying a Silicon Nitride layer to a nanophotonic waveguide [1,2]. Another innovative approach has been demonstrated, which is based on a chemical surface activation in a CMOS compatible plasma supported dry etching process [3].
© 2013 IEEE
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