Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
  • (Optica Publishing Group, 2015),
  • paper CB_P_1

High power GaInNAs VECSEL emitting at 1230/615 nm

Not Accessible

Your library or personal account may give you access

Abstract

Vertical-External-Cavity Surface-Emitting Lasers (VECSELs) offer an attractive solution for generating light at the visible wavelength range via efficient intracavity frequency-doubling [1]. Amongst the visible wavelengths, the orange-red 600 – 630 nm segment has been hard to reach due to the high lattice strain associated with the mature GaInAs/GaAs quantum well technology. The high lattice strain renders the fabrication of the gain mirrors difficult for the fundamental wavelength between 1200 – 1260 nm. Still, VECSELs emitting at 600–630 nm would be attractive light sources for many applications, including biophotonics and laser illuminated projection. Previously, an output power of 4.6 W has been reported in this wavelength region using dilute nitride quantum wells [2].

© 2015 IEEE

PDF Article
More Like This
High power VECSEL prototype emitting at 625 nm

Jussi-Pekka Penttinen, Tomi Leinonen, Antti Rantamäki, Ville-Markus Korpijärvi, Emmi Kantola, and Mircea Guina
ATu1A.8 Advanced Solid State Lasers (ASSL) 2017

50 W VECSEL emitting at 1180 nm

E. Kantola, T. Leinonen, J.-P. Penttinen, M. Tavast, S. Ranta, and M. Guina
CB_3_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2015

High Power 1100 - 1200 nm Semiconductor Disk Lasers

T. Leinonen, E. Kantola, S. Ranta, M. Tavast, V.-M. Korpijärvi, and M. Guina
ThA2_1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.