Abstract
We report on a relevant and sensitive methodology based on reverse I-V measurements correlated with low frequency electrical current noise measurements on chip-on-submount (CoS) GaAs-based Laser diodes. The objective is the screening tests improvement and electro-optical parameters cross-correlation assessment. As reported in a previous paper [1], equivalent DC electrical model of InGaAs/AlGaAs 9xx nm Laser diode is represented as an ideal diode representative of the active region (D1) and the lateral one (D2) clamped by a Zener diode in addition with an overall linear resistance RSH. It is well-known from literature that forward I-V measurements are impacted by serious defects in the active zone. Reverse characterizations especially close to breakdown voltage can reveal atypical behaviors in order to precisely discriminate devices and guarantee outstanding level of performance.
© 2015 IEEE
PDF ArticleMore Like This
Chan-Hyoung Oh, Dong-Pyo Han, Dong-Soo Shin, and Jong-In Shim
26P_100 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015
Y.N. Wang, C.Y. Tseng, Y. C. Chen, and N. C. Chen
WP_028 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2007
Jae-Hoon Ham, Chan-Hyoung Oh, Dong-Pyo Han, Hyunsung Kim, Jong-In Sim, Dong-Soo Shin, and Kyu-Sang Kim
26P_106 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015