Abstract

The recent burst in terahertz (THz) technology over the past few decades has found a myriad of applications spanning from defence and security to biomedical imaging, which have fuelled research for the development of more powerful and compact sources of THz radiation [1,2]. Semiconductor quantum-dot (QD) structures have recently been proposed as a promising candidate to the further development of such sources [3], owing to the combination of high carriers mobility, short carriers lifetime, high thermal breakdown tolerance and ability of the QD wafer to be perfectly matched to the pump wavelengths generated by compact ultrashort pulse lasers.

© 2015 IEEE