Abstract
In recent years, an extensive investigation has been undertaken by many research groups in order to improve the external quantum efficiency (EQE) of InGaN-based blue and green light emitting diodes (LEDs), and several approaches have been proposed and demonstrated. Since its first demonstration in 2001 [1], the use of the corrugated interface substrate (CIS) technology appears to be very promising [2,3] due to the minimization of total internal reflection at the Sapphire/GaN interface.
© 2015 IEEE
PDF ArticleMore Like This
Jun-Youn Kim, Yongjo Tak, Jae Won Lee, Hyun-Gi Hong, Suhee Chae, Hyoji Choi, Bokki Min, Youngsoo Park, Minho Kim, Seongsuk Lee, Namgoo Cha, Yoonhee Shin, Jong-Ryeol Kim, and Jong-In Shim
CWF1 CLEO: Science and Innovations (CLEO:S&I) 2011
Geun-Hwan Ryu, Hyun-Joong Kim, Won-Bo Yang, and Han-Youl Ryu
TuPH_7 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013
Arthur J. Fischer, Xiaoyin Xiao, Jeffrey Y. Tsao, Daniel D. Koleske, Ping Lu, Jeremy B. Wright, Sheng Liu, and George T. Wang
SM2J.3 CLEO: Science and Innovations (CLEO:S&I) 2014