Abstract
Hybrid organic-inorganic perovskites have emerged as excellent solution-processable materials for photovoltaic applications [1]. Recently, their light emission properties have also attracted considerable attention for light-emitting devices [2,3]. Here we demonstrate CH3NH3PbI3 light emitting field-effect transistor (LE-FET), a new device concept in perovskite-based optoelectronics.
© 2015 IEEE
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