Abstract
Nowadays, the state of art in integrated light emitting devices involves the correct choice of a suitable emitter and a proper functional matrix with good stability and electro-optical properties. In order to build a CMOS compatible device SiO2, Si3N4, and Al2O3 are suitable hosts as they show high chemical stability; and active emitting elements ranging from nano-particles, e.g. Si-np, down to single ions (usually rare-earth ions) can be easily embedded. [1] In the search of efficient light emission oxides have been studied extensively, and more recently the use of mixed compounds such as oxynitrides, has shown clear promise due to the possibility of varying their composition in order to tune their optical response. There are recent reports of oxynitrides as light emitters both under electrical excitation [2] and under optical excitation for the UV-visible broad band conversion of UV LEDS. [3]
© 2015 IEEE
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