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  • 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference
  • (Optica Publishing Group, 2015),
  • paper CE_7_3

1050 dB/cm Gain in a 57.5at.% Yb-doped KGd(WO4)2 Thin Film at 981 nm

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Abstract

Rare-earth-doped materials with high gain per unit length are essential for optical amplification on emerging small-footprint integrated optical devices in the fields of optical communication, optical backplanes, as well as optical sensing. Recently, a 47.5at.% Yb3+-doped potassium double tungstate waveguide amplifier was reported with 935 dB/cm gain at 981 nm [1], which is promising for developing high-gain amplifiers with lengths as short as a few millimetres. Here we present the results of perpendicular gain measurements in a ~32 μm-thick thin film of 57.5at.% Yb3+-doped potassium gadolinium double tungstate, KGd(WO4)2, and analyse the impact of pump-signal-foci mismatch to the gain achievable in our sample.

© 2015 IEEE

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