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High-efficiency and high-speed photodetectors are essential for optical communication, signal processing and measurement systems [1]. As we know, the uni-traveling-carrier photodetector (UTC-PD) [2] can offer high-speed response performance than PIN-PD. However, the quantum efficiency of UTC-PD is limited by the relatively thin absorption region. Therefore, some methods, such as increasing the thickness of absorption region, decreasing the device area and adopting distributed Bragg reflectors (DBRs, GaAs/AlGaAs [3], InP/InGaAsP), are taken to enhance the quantum efficiency of the device. In this letter, InP/InGaAsP DBRs is employing in UTC-PD to enhance the reflection of the light and make the light pass through the absorption layer twice so as to increase the quantum efficiency.
© 2015 IEEE
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