Abstract
High photocurrent and high-speed photodiodes (PDs) have attracted intensive research interests for the application of CATV network, photonic analog-to-digital converter and optical links to phased array antenna [1, 2]. To meet the requirements for both high photocurrent and high speed operations, various types of photodiodes have been investigated. Conventional PIN-PDs [3] is widely used for a high speed applications. However, the holes with much lower drift mobility and velocity, contribute dominantly to the space charge, which results in the degradation of device performance, especially under high power illumination. Uni-Traveling-Carrier photodiodes (UTC-PDs)[4], which could achieve high speed and high photocurrent operation simultaneously, have been demonstrated in recent years. For a typical UTC-PD which has an p-type doped InGaAs absorption layer and a wide bandgap InP collector, to suppress the current blocking and improve the device bandwidth and power/current handling capability, InGaAsP compositional graded quaternary structures are employed at the InGaAs/InP heterostructure interface to smooth the bandgap discontinuity. However, the presence of compositional graded InGaAsP layers at InGaAs/InP interface could result in the complexity and difficulty in the material growth and subsequent device fabrication. In this work, we show that, by using a dipole doped interface to suppress the current blocking, UTC-PDs with high photocurrent and large bandwidth can be realized.
© 2015 IEEE
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