Abstract

In this study, a novel structured purely sidewall core-shell nanorods light-emitting diode (LED) for constant green light emission has been successfully designed, fabricated and demonstrated. Via the newly developed three-dimensional (3D) dielectric material passivation and the selective epitaxial growth techniques, the Si₃N₄ dielectric layers capped on the top of the c-oriented GaN nanorod array can efficiently suppress the growth of multiple quantum wells (MQWs) in the logitudinal direction, generating a large active region grown on the sidewall facets at the non-polar plane with a homogeneous indium distribution. Figure 1 (a) schematically shows the electrical device of the proposed nanorods LED structure, while the embedded purely sidewall GaN nanorod array is as the scanning electron microscope (SEM) and transmission electron microscope (TEM) images shown in Fig. 1(b) and 1(c), repectively. The average height of the purely sidewall nanorods is about 0.85 μm and the width between the neighboring nanorods is about 0.8 μm. With the Si₃N₄ nanodisk covered on the constituent nanorods, the grown MQWs would not form pointed-tip structure as the conventional GaN-based nanorods. The purely sidewall nanorods consistent with reduced semi-polar MQWs but an enlarged area of non-polar region.

© 2015 IEEE