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Vertical-cavity surface-emitting lasers (VCSELs) are useful in numerous applications and in the past ~20 years, research work has been carried out on the development of III-nitride based VCSELs. Since then, injection laser operation of GaN-based VCSELs has been reported by several research teams; however, all the reported electrically pumped III-N VCSELs have peak emission in the visible violet-blue-green spectral range.[1-3] The development of ultraviolet (UV) VCSELs has been impeded due to limitations of electrical conductivity for both n- and p-type high-aluminium mole fraction AlxGa1-xN, relatively low reflectivity in the UV for III-N distributed Bragg reflectors (DBRs), and relatively high sub-bandgap absorption in p-type materials. The shortest reported optically pumped GaN-based VCSEL had undoped double-epitaxial AlGaN DBRs with a 10μm thick GaN active region and was reported 19 years ago to operate at 300K at λ=363.5nm with a threshold of 2MW/cm2.[4] These facts underscore the great difficultly of the development of UV VCSELs.
© 2015 IEEE
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