Er,Yb:GdAl3(BO3)4 Laser Passively Q-switched by MBE-grown Cr:ZnS Thin Films

K.N. Gorbachenya; V.E. Kisel; A.S. Yasukevich; N. Tolstik; E. Karhu; V. Furtula; E. Sorokin; V.V. Maltsev; N.I. Leonyuk; A. Galinis; T. Lipinskas; U. Gibson; I.T. Sorokina; N.V. Kuleshov

2017 European Conference on Lasers and Electro-Optics and European Quantum Electronics Conference
(Optica Publishing Group, 2017),
paper CA_1_2

Er,Yb:GdAl₃(BO₃)₄ Laser Passively Q-switched by MBE-grown Cr:ZnS Thin Films

K.N. Gorbachenya, V.E. Kisel, A.S. Yasukevich, N. Tolstik, E. Karhu, V. Furtula, E. Sorokin, V.V. Maltsev, N.I. Leonyuk, A. Galinis, T. Lipinskas, U. Gibson, I.T. Sorokina, and N.V. Kuleshov

The European Conference on Lasers and Electro-Optics 2017

Munich Germany
25–29 June 2017
ISBN: 978-1-5090-6736-7

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Novel Solid-State-Laser Concepts (CA_1)

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K. N. Gorbachenya, V. E. Kisel, A. S. Yasukevich, N. Tolstik, E. Karhu, V. Furtula, E. Sorokin, V. V. Maltsev, N. I. Leonyuk, A. Galinis, T. Lipinskas, U. Gibson, I. T. Sorokina, and N. V. Kuleshov, "Er,Yb:GdAl3(BO3)4 Laser Passively Q-switched by MBE-grown Cr:ZnS Thin Films," in 2017 European Conference on Lasers and Electro-Optics and European Quantum Electronics Conference, (Optica Publishing Group, 2017), paper CA_1_2.

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Abstract

Q-switched erbium lasers emitting in the 1.5-1.6 μm spectral region are widely used in laser rangefinders and LIBS systems.These applications require compact and low-cost sources of laser pulses with high average output power. Passive Q-switching is one of the most simple and reliable method to achieve the abovementioned requirements. Er,Yb:GdAl₃(BO₃)₄ (Er,Yb:GdAB) crystal was shown to be an efficient laser material for the 1.5-1.6 µm spectral range [1]. Recently a passively Q-switched Er,Yb:GdAB laser was demonstrated with Co²⁺:MgAl₂O₄, graphene and SWCNT saturable absorbers [2-4]. Here we report Er,Yb:GdAB laser Q-switched by using of MBE-grown Cr:ZnS thin films.

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