Abstract

Interband cascade lasers (ICLs) [1,2] combine two concepts for semiconductor lasers, in particular the long carrier lifetime of photodiodes together with the voltage-efficient cascading of the quantum cascade laser. The low threshold power makes them very attractive for mobile systems used for spectroscopy, process control or medical applications. To date no suitable overgrowth process exists for GaSb-based ICLs, which prohibits the usage of a top-grating etched into the cladding layer. Single-mode emission from a ridge facet has been achieved via sidewall gratings [3], patterning of germanium on the surface [4] or lateral metal gratings [6]. Light outcoupling towards the surface of the ICL has been demonstrated with vertical-cavity surface-emitting lasers [6].

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