Abstract

Semiconductor lasers operating in the 2-3 µm wavelength range are useful for a variety of applications including environmental monitoring, non-invasive medical diagnosis and industrial processing [1]. While type-I GaInAsSb/GaSb quantum well (QW) lasers have achieved room temperature operation up to 3.73 µm, they are limited by the effects of non-radiative Auger recombination, inter-valence band absorption and carrier leakage due to inadequate hole confinement, all of which induce sensitivity to temperature [2]. Here we report studies of the non-radiative recombination mechanisms in type-I GaInAsSb based lasers, in order to assist device optimisation [3-5].

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