Abstract

We report on the realization of quantum-dot (QD) micropillar lasers based on a buried stressor growth approach [1]. This method allows for the site-controlled growth and device integration of QDs with high optical quality [2, 3]. Compared to other concepts for site-controlled QD growth, this approach has the important advantage that the number of QDs within a small ensemble located in the center of the cavity can be controlled by the design of the buried stressor. This allows one to fine-tune the gain and, thus, to engineer the devices for few-QD lasing or for single-QD emission regimes. Moreover, the applied technique ensures that the ensemble with a controlled number of QDs is located in the electric field maximum at the center of the micropillars to provide maximum light-matter coupling strength.

© 2017 IEEE