Abstract

Development of ultra-small and efficient laser sources for photonic integrated circuits is one of the main cornerstones in achieving the requirements imposed for on-chip optical interconnects [1]. The InP photonic crystal (PhC) platform with selectively embedded gain medium [2] is a promising way of separating active light amplification regions from passive regions for light propagation without induced absorption losses and surface recombination. The main focus of this work is the fabrication and experimental demonstration of a buried heterostructure (BH) photonic crystal laser bonded to a silicon wafer, illustrating the effective single-platform active-passive material integration method.

© 2017 IEEE