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Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].
© 2017 IEEE
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