Abstract

Deep ultraviolet (DUV) lasers are actively used for semiconductor lithography. Argon fluoride excimer laser (ArF excimer laser) is the typical light source which can generate above 100-W optical power at the wavelength of below 200-nm with several tens of nanoseconds pulse duration. Using all-solid-state DUV light source as a seed laser and amplifying by ArF excimer (hybrid laser), both high average power and low power consumption can be realized in the DUV region [1]. In addition, the ArF hybrid laser can generate the high beam quality pulse with short pulse duration which is suitable for precise micromachining applications. We are developing a hundred-watt class short pulse hybrid laser at the wavelength of 193-nm.

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