Abstract

Miniature high peak power laser systems based on the microchip geometry are promising radiation sources for many applications, like micromanufacturing, remote sensing, data storage, LIBS, etc.[1] The suitability and excellent performance of Yb:YAG/Cr:YAG micro-lasers were reported recently.[2, 3] This study follows our previous experiments [4] and it is focused on investigation of the temperature and pumping beam radius influence on the output parameters of the longitudinally diode-pumped passively Q-switched Yb:YAG/Cr:YAG microchip laser. The goal was to reach as high as possible output energy for given pumping power.

© 2019 IEEE