High-Power III-V-on-Silicon Semiconductor Optical Amplifier (&gt; 50 mW) for Integrated Mode-Locked Lasers

Kasper Van Gasse; Kasper Van Gasse; Ruijun Wang; Ruijun Wang; Gunther Roelkens; Gunther Roelkens

2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 2019),
paper cb_3_2

High-Power III-V-on-Silicon Semiconductor Optical Amplifier (> 50 mW) for Integrated Mode-Locked Lasers

Kasper Van Gasse, Ruijun Wang, and Gunther Roelkens

The European Conference on Lasers and Electro-Optics 2019

Munich Germany
23–27 June 2019
ISBN: 978-1-7281-0469-0

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Integrated semiconductor lasers and amplifiers (cb_3)

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K. Van Gasse, R. Wang, and G. Roelkens, "High-Power III-V-on-Silicon Semiconductor Optical Amplifier (> 50 mW) for Integrated Mode-Locked Lasers," in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, OSA Technical Digest (Optica Publishing Group, 2019), paper cb_3_2.

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Abstract

Integrated semiconductor optical amplifiers (SOAs) with high output power are essential components in many future photonic applications such as LIDAR, microwave photonics and coherent optical communication [1]. Even more so in integrated mode-locked lasers, where the amplifier can severely limit the pulse energy [2]. InP/InGaAsP SOAs with high optical confinement can suffer from two-photon absorption and non-linear absorption associated with the generated carriers.

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