Abstract
The increase in modulation bandwidth of a vertical-cavity surface-emitting laser (VCSEL) can be achieved through the vertical integration of a modulator onto the laser. This approach has already been proposed and demonstrated to be competitive [1-3]. In this specific case, a double mesa structure with three contacts is needed to apply a high-frequency voltage signal to the modulator section and inject a CW current into the underlying VCSEL section. The middle contact serves as a shared ground. Indeed, splitting the emitting and the modulating parts circumvents the carrier dynamics limitation of the modulation bandwidth encountered in direct current-modulated VCSELs. However, the parasitic capacitances of the access line and contact pad play a significant role in the high-frequency limit of such a device.
© 2019 IEEE
PDF ArticleMore Like This
Hidekazu Kawanishi, Yoshinori Yamauchi, Naoyuki Mineo, Yoshiki Shibuya, Hitoshi Murai, Koji Yamada, and Hiroshi Wada
MJ3 Optical Fiber Communication Conference (OFC) 2001
M. Trajkovic, F. Blache, H. Debregeas, L. M. Augustin, E. den Haan, K. A. Williams, and X. J. M. Leijtens
JTh5A.8 CLEO: Applications and Technology (CLEO:A&T) 2018
A. Paraskevopoulos, H.J. Hensel, W.D. Molzow, H. Klein, N. Grote, N.N. Ledentsov, V.A. Shchukin, C. Möller, A.R. Kovsh, D.A. Livshits, I.L. Krestnikov, S.S. Mikhrin, P. Matthijsse, and G. Kuyt
PDP22 Optical Fiber Communication Conference (OFC) 2006