Abstract
Recombination of ground state (GS) and excited state (ES) electrons and holes in semiconductor lasers may lead to simultaneous lasing at both states, which is important for applications in all-optical switches and converters used in all-optical networks. Two state lasing in quantum dot lasers has been extensively studied over the last decade [1-2]. For the pulsed pumping, it has been shown that the GS and ES turn-ons result from different physical mechanisms. Extremely fast dynamical interaction between the lasing states defines the two successive laser thresholds with significant delays between the GS and ES turn-ons [3]. In this work, we explore the simultaneous generation from GS and ES in quantum well laser under various pulsed pumping conditions.
© 2019 IEEE
PDF ArticleMore Like This
E. A. Viktorov, T. Erneux, M. Abusaa, J. Danckaert, V. V. Dudelev, E. D. Kolykhalova, K. K. Soboleva, A. G. Deryagin, I. I. Novikov, M. V. Maximov, A. E. Zhukov, V. M. Ustinov, V. I. Kuchinskii, W. Sibbett, E. U. Rafailov, and G. S. Sokolovskii
CB_P_22 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2015
M. Dillane, I. Dubinkin, N. Federov, T. Erneux, D. Goulding, B. Kelleher, and E.A. Viktorov
jsi_p_9 European Quantum Electronics Conference (EQEC) 2019
Stefan Meinecke, Benjamin Lingnau, André Röhm, and Kathy Lüdge
CB_P_23 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2017