Abstract
InAs/GaAs quantum dot (QD) lasers monolithically grown on Ge or Si are a promising method to achieve low cost, large scale, and high yield optical sources for photonic integrated circuits [1]. This work shows that a free-running Ge-based QD laser can output periodic pulse oscillations with one, two and three periods, without incorporating saturable absorber or employing any external perturbations [2,3]. The QD laser under study was epitaxially grown on a 4-inch Ge-wafer by the gas-source molecular beam epitaxy, and the active region consists of five stacked dot-in-well layers [4]. The wafer was fabricated into a ridge-waveguide laser with a ridge width of 4.0 µm and a cavity length of 4.4 mm. The laser shows a lasing threshold of 60 mA at 20 °C, and the lasing peak is at 1213 nm. Figure 1(a) shows that the relative intensity noise (RIN) of the Ge-based laser pumped at 80 mA exhibits a common resonance with continuous-wave output. However, the resonance of the laser pumped at 160 mA does not become overdamped, but evolves into pulse oscillations with a high and sharp peak.
© 2019 IEEE
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