Abstract

Silica whispering gallery mode microlasers have potential applications in sensing and communications. One method is to fabricate the microcavity through originally doped glasses with gain materials such as erbium (Er³⁺ ions) [1]. Besides, rare-earth ions and quantum dots can be doped into the silica microcavity through ion implantation method based on a complicated CMOS process [2] or the low-cost sol−gel processing method [3]. The sol−gel method is more conventional, however, still requires a relatively complicated process, also cracks and defects may emerge during the process, which seriously degenerates the Q factors of the microcavities [4].

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