Abstract

InAs quantum dot lasers epitaxially grown on Si show promise for achieving lower cost and higher performance photonic integrated circuits. The discrete density of states inherent to quantum dot lasers reduces their threshold current, improves stability against optical feedback, and yields better high temperature performance [1]. Through optimization of the epitaxial III-V buffer layers on on-axis (001) Si, dislocation densities have been reduced from 3×10⁸ cm⁻² to < 7×10⁶ cm⁻² leading to an improvement in device lifetime of more than four orders of magnitude at 35°C [2].

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