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Conferences > CLEO_Europe > 2021 > cb_p > cb_p_18
  • 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 2021),
  • paper cb_p_18

High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800 µm) based on epitaxially integrated triple heterostructures

Sergey O. Slipchenko, Alexander A. Podoskin, Polina S. Gavrina, Nikita A. Pikhtin, Petr S. Kop‘ev, Timur A. Bagaev, Maxim A. Ladugin, Anatoliy A. Padalitsa, and Alexander A. Marmalyuk

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Abstract

High-power pulsed ultra-wide-aperture 800 m semiconductor lasers 905 nm based on epitaxially integrated triple heterostructures are developed. A slope of 2.2-2.9 WA and a peak power of 216 W are observed at 90 A100 ns.

© 2021 IEEE

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