Abstract
Non-polar m-ZnO is a new material in THz-intersubband optoelectronics for overcoming previous LO-phonon-energy-based limitations as in GaAs-based THz-QCLs. We present a novel fabrication-scheme for ZnOZn_0.88Mg_0.12O THz-QCL structures, yielding the first observation of THz-electroluminescence in ZnO.
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