Abstract
We demonstrate transient metallization and lightwave-driven current control with 300-pJ pulses at 80 MHz repetition rate in dielectrics SiO_2 and HfO_2, and semiconductor GaN. This will permit to move current control toward GHz repetition rate.
© 2021 IEEE
PDF ArticleMore Like This
Václav Hanus, Viktória Csajbók, Zsuzsanna Pápa, Judit Budai, Zsuzsanna Márton, Gellért Zsolt Kiss, Péter Sándor, Pallabi Paul, Adriana Szeghalmi, Zilong Wang, Boris Bergues, Matthias F. Kling, György Molnár, János Volk, and Péter Dombi
FTh4B.5 Frontiers in Optics (FiO) 2021
Václav Hanus, Viktória Csajbók, Zsuzsanna Pápa, Judit Budai, Péter Sándor, György Molnár, János Volk, and Péter Dombi
Th4A.2 International Conference on Ultrafast Phenomena (UP) 2020
Sven Kleinert, Ayhan Tajalli, David Zuber, José R.C. Andrade, and Uwe Morgner
JTh3A.83 CLEO: Applications and Technology (CLEO:A&T) 2021