Abstract

In recent years, laser sources based on hybrid integration have been attracting surging interest for their compatibility with silicon photonic (SiPh) platforms making them the key components for many applications in optical communication and sensing. Furthermore, this technology is appealing for the realization of optical frequency combs (OFC) [1] at chip scale [2]. In this contribution, we address the dynamics of III-V/SiN hybrid lasers with high-Q SiN rings (Fig. 1a), providing a narrowband effective reflectivity (|r_eff|² in Fig.1c). Our model makes use of time-delayed algebraic equations accounting for mirror frequency selectivity [4].

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