Abstract

Mode-locked diode lasers, with their compact size and low price, are regarded as a promising alternative for the widely used Ti:sapphire lasers and fiber lasers in generating ultrashort optical pulses. Mode-locked quantum well diode lasers emitting at a wavelength of 830 nm have been successfully demonstrated as pulsed sources in terahertz time-domain spectroscopy for non-destructive examination [1], and in two-photon polymerization for 3D micro-structuring [2]. However, a crucial limitation of the application of such diode lasers is their insufficient pulse peak power. A feasible way to improve the pulse energy without additional amplifying stages is to employ a tapered (TP) gain section in the diode laser [3]. In this contribution, we will present monolithic mode-locked laser diodes with TP gain section for the generation of picosecond pulses with high peak power emitting around 780 nm and 830 nm, respectively.

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