244nm Direct UV Written Gratings in SiNx layers

Alex I. Flint; Greta De Paoli; Stefan. T. Ilie; Rex H.S. Bannerman; Paul C. Gow; James. C. Gates; Fredric Y. Gardes; Peter G.R. Smith

Conference on Lasers and Electro-Optics/Europe (CLEO/Europe 2023) and European Quantum Electronics Conference (EQEC 2023)
Technical Digest Series (Optica Publishing Group, 2023),
paper cm_7_6

244nm Direct UV Written Gratings in SiN_x layers

Alex I. Flint, Greta De Paoli, Stefan. T. Ilie, Rex H.S. Bannerman, Paul C. Gow, James. C. Gates, Fredric Y. Gardes, and Peter G.R. Smith

The European Conference on Lasers and Electro-Optics 2023

Munich Germany
26–30 June 2023
ISBN: 979-8-3503-4599-5

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Laser written waveguides and gratings (cm_7)

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A. I. Flint, G. De Paoli, S. T. Ilie, R. H. S. Bannerman, P. C. Gow, J. C. Gates, F. Y. Gardes, and P. G. R. Smith, "244nm Direct UV Written Gratings in SiNx layers," in Conference on Lasers and Electro-Optics/Europe (CLEO/Europe 2023) and European Quantum Electronics Conference (EQEC 2023), Technical Digest Series (Optica Publishing Group, 2023), paper cm_7_6.

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Abstract

Silicon nitride (SiN_x) is a versatile photonic integrated circuit (PIC) platform due to its large transparency window, low nonlinear loss, high refractive index contrast, and the ability to vary optical properties through different deposition techniques [1,2,3]. Recent studies have demonstrated the ability to change the refractive index of SiN_x layers through exposure to 244nm radiation from an argon-ion laser [3,4]. In this work, we utilize this phenomenon to laser-inscribe gratings in layers of various compositions of SiN_x.

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