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Near Infrared light emitting from InN/InGaN/GaN Dot-in-a-Nanorod Heterostructure

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Abstract

We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed.

© 2013 Optical Society of America

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