Share with Facebook
Tweet This
Post on reddit
Share with LinkedIn
Add to CiteULike
Add to Mendeley
Add to BibSonomyAbstract
We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed.
© 2013 Optical Society of America
PDF ArticleMore Like This
Enhanced Terahertz Generation from InGaN/GaN Dot-in-a-Wire Light Emitting Diodes
Guan Sun, Ruolin Chen, Yujie J. Ding, Hieu P. T. Nguyen, and Zetian Mi
JTh2A.57 CLEO: QELS_Fundamental Science (CLEO:FS) 2013
Photoluminescence From InN Nanorod Arrays with a Critical Size
K.-Y. Chang, Y.-S. Liu, S. Gwo, and H. Ahn
TuPH_5 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013
Green Light Emitting Diodes with High Internal Quantum Efficiency InGaN/GaN Self-Organized Quantum Dots Grown by RF-Plasma Assisted Molecular Beam Epitaxy
Meng Zhang, Wei Guo, Animesh Banerjee, and Pallab Bhattacharya
CMKK5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010