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Effect of InGaN/GaN Multiple Quantum Wells with p-n Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes

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In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs).The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.

© 2013 Optical Society of America

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