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High-index-contrast Grating Mirrors Implemented on the Polysilicon Gates of a Standard Bulk CMOS Process

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Abstract

High-index-contrast grating implemented in bulk CMOS can provide 95% surface reflectivity with 50 nm bandwidth for TE polarization. Higher reflectivity is achievable by creating air cavities beneath HCGs to avoid the optical leakage to the substrate.

© 2015 Optical Society of America

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