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Conferences > CLEO_QELS > 2016 > FTu3N > FTu3N.6

Petahertz frequency operation with gallium nitride semiconductor

Hiroki Mashiko, Katsuya Oguri, Tomohiko Yamaguchi, Akira Suda, and Hideki Gotoh

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Abstract

We demonstrate optical drive with 1.16-PHz frequency using gallium nitride (GaN) wide-bandgap semiconductor. An isolated attosecond pulse with coherent broadband spectrum reveals dipole oscillation with 860-as periodicity in the GaN electron and hole system.

© 2016 Optical Society of America

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